Learn how Gallium Nitride will power the next generation of electric vehicles
Original headline: Automotive Tech Forum: GaN Building Blocks in EV’s and Their Design Roadmap in 2026 and Beyond — eetimes.com
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The article announces an upcoming automotive tech forum presentation by Andrew Smith of Power Integrations, focusing on Gallium Nitride (GaN) technology in electric vehicles. GaN semiconductors offer highly efficient, nearly lossless switching compared to traditional silicon-based components, which is particularly valuable as EVs transition to higher 800V DC bus architectures.
The presentation will examine how GaN is already improving EV efficiency by 2-3% in ancillary systems and explore its potential expansion into on-board chargers and drive trains—areas traditionally dominated by IGBTs and silicon carbide. The forum will also address GaN reliability and cost considerations, positioning this semiconductor technology as a key enabler for more affordable and efficient electric vehicles in the coming years.
Read the original at eetimes.com
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